LH28F004SU-Z9 Datasheet - Sharp Electrionic Components

LH28F004SU-Z9 - 4M (512 bb 8) Flash Memory

SYMBOL TYPE NAME AND FUNCTION WORD-SELECT ADDRESSES: Select a word within one 16K block. These addresses are latched during Data Writes. BLOCK-SELECT ADDRESSES: Select 1 of 32 Erase blocks. These addresses are latched during Data Writes, Erase and Lock-Block operations. A0 - A13 A14 - A18 INPUT I.

LH28F004SU-Z9 Features

* 42-PIN CSP 4M (512 × 8) Flash Memory TOP VIEW

* 512K × 8 Word Configuration

* 2.7 V Write/Erase Operation (5 V ± 0.5 V VPP, 3.0 V ± 0.3 V VCC, +15°C to +35°C)

* No Requirement For DC/DC Converter To Write/Erase 1 A GND B C D E F A17 A10 A14 A16 A15 2 DQ6 DQ7 NC A13 A11 A

LH28F004SU-Z9_SharpElectrionicComponents.pdf