LH28F160S5H-L Datasheet PDF - Sharp Electrionic Components 16 M-bit (2 MB x 8/1 MB x 16) Smart 5 Flash Memories (Fast Programming) Specs

LH28F160S5H-L - 16 M-bit (2 MB x 8/1 MB x 16) Smart 5 Flash Memories (Fast Programming)

Datasheet Summary

Description

The LH28F160S5-L/S5H-L flash memories with Smart 5 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through highly-optimized page buffer operations.

Features

Absolute protection with VPP = GND.
Flexible block locking.
Erase/write lockout during power transitions.
SRAM-compatible write interface.
User-configurable x8 or x16 operation.
High-density symmetrically-blocked architecture.
Thirty-two 64 k-byte erasable blocks.
Enhanced cycling capability.
100 000 block erase cycles.
3.2 million block erase cycles/chip.
Low power management.
Deep power.

Datasheet Details

Part number	LH28F160S5H-L
Manufacturer	Sharp Electrionic Components
File Size	366.24 KB
Description	16 M-bit (2 MB x 8/1 MB x 16) Smart 5 Flash Memories (Fast Programming)
Datasheet	LH28F160S5H-L Datasheet
Additional preview pages of the LH28F160S5H-L datasheet.

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Full PDF Text Transcription

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LH28F160S5-L/S5H-L LH28F160S5-L/S5H-L DESCRIPTION The LH28F160S5-L/S5H-L flash memories with Smart 5 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through highly-optimized page buffer operations. Their symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Their enhanced suspend capabilities provide for an ideal solution for code + data storage applications.

Published: Mar 22, 2005 |