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LH28F160S3HNS-TR - Flash Memory 16M (2Mb x 8 / 1Mb x 16)

Datasheet Summary

Features

  • Absolute Protection with VPP=GND Flexible Block Locking Erase/Write Lockout during Power Transitions.
  • Extended Cycling Capability 100,000 Block Erase Cycles 3.2 Million Block Erase Cycles/Chip.
  • Low Power Management Deep Power-Down Mode Automatic Power Savings Mode Decreases ICC in Static Mode.
  • Automated Write and Erase Command User Interface Status Register.
  • Industry-Standard Packaging 56-Lead SSOP.
  • ETOXTM.
  • V Nonvolatile Flash Technology.
  • CMOS Process (P-type si.

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Datasheet preview – LH28F160S3HNS-TR

Datasheet Details

Part number LH28F160S3HNS-TR
Manufacturer Sharp Microelectronics
File Size 789.54 KB
Description Flash Memory 16M (2Mb x 8 / 1Mb x 16)
Datasheet download datasheet LH28F160S3HNS-TR Datasheet
Additional preview pages of the LH28F160S3HNS-TR datasheet.

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PRODUCT SPECIFICATION www.DataSheet4U.com Integrated Circuits Group LH28F160S3HNS-TR Flash Memory 16M (2Mb x 8 / 1Mb x 16) (Model Number: LHF16KTR) Spec. Issue Date: November 1, 2004 Spec No: EL16Y005 www.DataSheet4U.com LHF16KTR ●Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express www.DataSheet4U.com written permission of the company. ●When using the products covered herein, please observe the conditions written herein and the precautions outlined in the following paragraphs. In no event shall the company be liable for any damages resulting from failure to strictly adhere to these conditions and precautions.
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