LH28F160S3HNS-TR Datasheet, 16), Sharp Microelectronics

LH28F160S3HNS-TR Features

• 16) Absolute Protection with VPP=GND Flexible Block Locking Erase/Write Lockout during Power Transitions
• Extended Cycling Capability 100,000 Block Erase Cycles 3.2 Million Block E

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LH28F160S3HNS-TR

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Sharp Microelectronics

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📄 Datasheet

Description:

Flash memory 16m (2mb x 8 / 1mb x 16).

LH28F160S3HNS-TR Application

• Applications Its symmetrically-blocked architecture, flexible voltage and extended cycling provide for highly flexible component suitable for resid

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LH28F160S3HNS-TR

Sharp Microelectronics

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