Datasheet Details
Part number:
LH28F160S3NS-L10
Manufacturer:
Sharp Electrionic Components
File Size:
3.58 MB
Description:
Flash Memory 16M (2MB bb 8/1MB bb 16)
LH28F160S3NS-L10_SharpElectrionicComponents.pdf
Datasheet Details
Part number:
LH28F160S3NS-L10
Manufacturer:
Sharp Electrionic Components
File Size:
3.58 MB
Description:
Flash Memory 16M (2MB bb 8/1MB bb 16)
Features
* - Absolute Protection with VpP=GND - Flexible Block Locking - Erase/Write Lockout during Power Transitions Extended Cycling Capability - 100,000 Block Erase Cycles - 3.2 Million Block Erase Cycles/Chip Low Power Management - Deep Power-Down Mode - Automatic Power Savings Mode Decreases ICC in StaticApplications
* Its symmetrically-blocked architecture, flexible voltage Ind extended cycling provide for highly flexible component suitable for resident flash arrays, SlMMs and memory :ards. Its enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For iecure code storaLH28F160S3NS-L10 Distributors
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