LH51BV1000J Datasheet - Sharp Electrionic Components

LH51BV1000J CMOS 1M (128K x 8) Static Ram

The LH51BV1000JY is a static RAM organized as 131,072 × 8 bits which provides low power standby mode. It is fabricated using silicon-gate CMOS process technology. A B C D E F CMOS 1M (128K × 8) Static Ram PIN CONNECTIONS 1 A2 I/O1 GND I/O4 I/O7 A10 2 A3 A0 I/O3 I/O5 3 A1 I/O2 4 5 6 NC A12 7 A.

LH51BV1000J Features

* Access time: 70 ns (MAX.)

* Current consumption: Operating: 30 mA (MAX.) 5 mA (MAX.) (tRC, tWC = 1 µs) Standby: 60 µA (MAX.)

* Data Retention: 1.0 µA (MAX.) (VCCDR = 3 V, TA = 25°C)

* Single power supply: 2.7 V to 3.6 V

* Operating temperature: -25°C to +85°

LH51BV1000J_SharpElectrionicComponents.pdf