KA100O015E-BJTT - 2CKE DDP Mobile DDR SDRAM
(Samsung semiconductor)
Rev. 1.0, Jul. 2010 KA100O015E-BJTT
MCP Specification
4Gb (256M x16) NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM
datasheet
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KA101-01 - 400 - 2700MHz Medium Power Amplifier
(KCB)
KA101-01, -10, -54
400-2700 MHz Medium Power Amplifier
Description
The KA101 a high performance, ultra-wideband, medium power GaAs pHEMT amplifier wit.
KA101-10 - 400 - 2700MHz Medium Power Amplifier
(KCB)
KA101-01, -10, -54
400-2700 MHz Medium Power Amplifier
Description
The KA101 a high performance, ultra-wideband, medium power GaAs pHEMT amplifier wit.
KA101-54 - 400 - 2700MHz Medium Power Amplifier
(KCB)
KA101-01, -10, -54
400-2700 MHz Medium Power Amplifier
Description
The KA101 a high performance, ultra-wideband, medium power GaAs pHEMT amplifier wit.
KA1031S28 - Potentiometer
(NTE Electronics)
Features
• • • • •
Hot molded carbon element Gold plated terminals Stainless steel shaft and housing Available in Linear (KU) and Logarithmic (KA) tap.
KA1041S28 - Potentiometer
(NTE Electronics)
Features
• • • • •
Hot molded carbon element Gold plated terminals Stainless steel shaft and housing Available in Linear (KU) and Logarithmic (KA) tap.
KA105 - Driver Amplifier
(KCB)
KA105
Driver Amplifier 0.05 – 3.8 GHz
DESCRIPTION
The KA105 is a GaAs pHEMT broadband Driver and Low noise Amplifier with high linearity in a hermet.
KA1051S28 - Potentiometer
(NTE Electronics)
Features
• • • • •
Hot molded carbon element Gold plated terminals Stainless steel shaft and housing Available in Linear (KU) and Logarithmic (KA) tap.
KA107 - AMPLIFIER
(Micross)
AMPLIFIER, LOW NOISE 1.3 – 3.0 GHz
Part Numbers: KA107
Preliminary Data Sheet
The KA107 is a GaAs pHEMT broadband Low Noise Amplifier with high linea.
KA115 - Amplifier
(KCB)
KA115
Amplifier, Low Noise 2-18 GHz
DESCRIPTION
The KA115 is a GaAs pHEMT broadband Low Noise Amplifier with high linearity in a hermetic surface mo.
