Datasheet4U Logo Datasheet4U.com

KA100O015E-BJTT

2CKE DDP Mobile DDR SDRAM

KA100O015E-BJTT Features

* Operating Temperature : -25°C ~ 85°C

* Package : 137-ball FBGA Type - 10.5 x 13 x 1.2mmt, 0.8mm pitch

* Voltage Supply - 1.8V Device : 1.7V ~ 1.95V

* Organization - Memory Cell Array : (256M + 8M) x 16bit for 4Gb (512M + 16M) x 16bit for 8Gb DD

KA100O015E-BJTT General Description

The KA100O015E is a Multi Chip Package Memory which combines 4G bit NAND Flash Memory and 4G bit DDP synchronous high data rate Dynamic RAM. NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 420μs(TBD) on the (.

KA100O015E-BJTT Datasheet (1.78 MB)

Preview of KA100O015E-BJTT PDF

Datasheet Details

Part number:

KA100O015E-BJTT

Manufacturer:

Samsung semiconductor

File Size:

1.78 MB

Description:

2cke ddp mobile ddr sdram.
Rev. 1.0, Jul. 2010 KA100O015E-BJTT MCP Specification 4Gb (256M x16) NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datasheet .

📁 Related Datasheet

KA101-01 - 400 - 2700MHz Medium Power Amplifier (KCB)
KA101-01, -10, -54 400-2700 MHz Medium Power Amplifier Description The KA101 a high performance, ultra-wideband, medium power GaAs pHEMT amplifier wit.

KA101-10 - 400 - 2700MHz Medium Power Amplifier (KCB)
KA101-01, -10, -54 400-2700 MHz Medium Power Amplifier Description The KA101 a high performance, ultra-wideband, medium power GaAs pHEMT amplifier wit.

KA101-54 - 400 - 2700MHz Medium Power Amplifier (KCB)
KA101-01, -10, -54 400-2700 MHz Medium Power Amplifier Description The KA101 a high performance, ultra-wideband, medium power GaAs pHEMT amplifier wit.

KA1031S28 - Potentiometer (NTE Electronics)
Features • • • • • Hot molded carbon element Gold plated terminals Stainless steel shaft and housing Available in Linear (KU) and Logarithmic (KA) tap.

KA1041S28 - Potentiometer (NTE Electronics)
Features • • • • • Hot molded carbon element Gold plated terminals Stainless steel shaft and housing Available in Linear (KU) and Logarithmic (KA) tap.

KA105 - Driver Amplifier (KCB)
KA105 Driver Amplifier 0.05 – 3.8 GHz DESCRIPTION The KA105 is a GaAs pHEMT broadband Driver and Low noise Amplifier with high linearity in a hermet.

KA1051S28 - Potentiometer (NTE Electronics)
Features • • • • • Hot molded carbon element Gold plated terminals Stainless steel shaft and housing Available in Linear (KU) and Logarithmic (KA) tap.

KA107 - AMPLIFIER (Micross)
AMPLIFIER, LOW NOISE 1.3 – 3.0 GHz Part Numbers: KA107 Preliminary Data Sheet The KA107 is a GaAs pHEMT broadband Low Noise Amplifier with high linea.

TAGS

KA100O015E-BJTT 2CKE DDP Mobile DDR SDRAM Samsung semiconductor

Image Gallery

KA100O015E-BJTT Datasheet Preview Page 2 KA100O015E-BJTT Datasheet Preview Page 3

KA100O015E-BJTT Distributor