KA100O015E-BJTT - 2CKE DDP Mobile DDR SDRAM

Samsung semiconductor

Datasheet Details

The KA100O015E is a Multi Chip Package Memory which combines 4G bit NAND Flash Memory and 4G bit DDP synchronous high data rate Dynamic RAM.

Operating Temperature : -25°C ~ 85°C.
Package : 137-ball FBGA Type - 10.5 x 13 x 1.2mmt, 0.8mm pitch.
Voltage Supply - 1.8V Device : 1.7V ~ 1.95V.
Organization - Memory Cell Array : (256M + 8M) x 16bit for 4Gb (512M + 16M) x 16bit for 8Gb DDP - Data Register : (2K + 64) x 16bit.
Automatic Program and Erase - Page Program : (2K + 64)Word - Block Erase : (128K + 4K)Word.
Page Read Operation - Page Size : (2K + 64)Word - R.

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