KA100O015E-BJTT Datasheet - Samsung semiconductor

KA100O015E-BJTT 2CKE DDP Mobile DDR SDRAM

The KA100O015E is a Multi Chip Package Memory which combines 4G bit NAND Flash Memory and 4G bit DDP synchronous high data rate Dynamic RAM. NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typical 420μs(TBD) on the (.

Rev. 1.0, Jul. 2010 KA100O015E-BJTT MCP Specification 4Gb (256M x16) NAND Flash + 4Gb (64M x32 + 64M x32) 2/CS,2CKE DDP Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole.

KA100O015E-BJTT Features

* Operating Temperature : -25°C ~ 85°C

* Package : 137-ball FBGA Type - 10.5 x 13 x 1.2mmt, 0.8mm pitch

* Voltage Supply - 1.8V Device : 1.7V ~ 1.95V

* Organization - Memory Cell Array : (256M + 8M) x 16bit for 4Gb (512M + 16M) x 16bit for 8Gb DD

KA100O015E-BJTT_Samsungsemiconductor.pdf