KA100O015E-BJTT Datasheet, Sdram, Samsung semiconductor

KA100O015E-BJTT Features

• Sdram
• Operating Temperature : -25°C ~ 85°C
• Package : 137-ball FBGA Type - 10.5 x 13 x 1.2mmt, 0.8mm pitch
• Voltage Supply - 1.8V Device : 1.

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Part number:

KA100O015E-BJTT

Manufacturer:

Samsung semiconductor

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1.78MB

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📄 Datasheet

Description:

2cke ddp mobile ddr sdram. The KA100O015E is a Multi Chip Package Memory which combines 4G bit NAND Flash Memory and 4G bit DDP synchronous high data rate Dynam

KA100O015E-BJTT Application

• Applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governm

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KA100O015E-BJTT

Samsung semiconductor

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