B5817W
Shunye
891.06kb
Schottky diode.
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📁 Related Datasheet
B5817W - SCHOTTKY BARRIER DIODE
(JCET)
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
B5817W-5819W SCHOTTKY BARRIER DIODE
FEATURES For use in low vo.
B5817W - Schottky Barrier Diode
(Rectron)
SOD-123 Plastic-Encapsulated Schottky Barrier Diode
B5817W THRU
B5819W
Features High Current Capability Low Forward Voltage Drop P/N suffix V means .
B5817W - SCHOTTKY DIODES
(AiT Components)
AiT Components Inc.
.ait-ponents.
B5817W~B5819W
SCHOTTKY DIODES
SCHOTTKY BARRIER DIODE
DESCRIPTION
The B5817W~B5819W are available in SOD-1.
B5817W - SURFACE MOUNT SCHOTTKY BARRIER DIODE
(LITE-ON)
SURFACE MOUNT SCHOTTKY BARRIER DIODE
B5817W thru B5819W
REVERSE VOLTAGE – 20 to 40 Volts FORWARD CURRENT – 1 Ampere
FEATURES
• For use in low voltag.
B5817W - Schottky Barrier Diode
(GME)
Production specification
Schottky Barrier Diode
FEATURES
Extremely low VF. Low stored change,majority carrier
Conduction. Low power loss/high e.
B5817W - SCHOTTKY DIODE
(UTC)
UNISONIC TECHNOLOGIES CO., LTD B5817W
SCHOTTKY DIODE
DESCRIPTION The UTC B5817W is a schottky diode, it uses UTC’s advanced
technology to provide c.
B5817W - Schottky Diode
(Taiwan Semiconductor)
Small Signal Product
B5817W/B5818W/B5819W
Taiwan Semiconductor
SOD-123 40V/1A Schottky Diode
FEATURES
- Low Forward Voltage Drop - Surface Mounted .
B5817W - Schottky Barrier Diode
(LGE)
B5817W-B5819W
Schottky Barrier Diode
+
SOD-123
0.053(1.35) Max.
0.022(0.55) Typ. Min.
Features
-
For use in low voltage, high frequency inverter.
B5817W - Schottky Barrier Rectifier
(MCC)
MCC 5
Micro Commercial Components
omponents 0DULOOD6WUHHW&KDWVZRUWK
# $
% # .
B5817W - SCHOTTKY BARRIER DIODE
(TRANSYS)
1. 05
B5817W SCHOTTKY BARRIER DIODE
FEATURES
Power dissipation
PD: 450 mW (Tamb=25℃) Collector current
IF: 1 A Collector-base voltage
VR: 20 V Operat.
