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LD242 Datasheet - Siemens Group

LD242 GaAs Infrared Emitter

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlaßstrom, TC = 25 °C Forward current Stoßstrom, τ ≤ 10 µs, D = 0 Surge current Verlustleistung, TC = 25 °C Power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value * .

LD242 Features

* q GaAs infrared emitting diode, fabricated in a q q q q q Schmelzepitaxieverfahren Kathode galvanisch mit Gehäuseboden verbunden Hohe Zuverlässigkeit Großer Öffnungskegel Gehäusegleich mit BP 103, BPX 63, SFH 464, SFH 483 Anwendungsklasse nach DIN 40 040 GQG liquid phase epitaxy process Cathode is

LD242_SiemensSemiconductorGroup.pdf

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Datasheet Details

Part number:

LD242

Manufacturer:

Siemens Group

File Size:

39.85 KB

Description:

Gaas infrared emitter.

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LD242 LD242 GaAs Infrared Emitter Siemens Group

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