* q GaAs infrared emitting diode, fabricated in a q q q q q Schmelzepitaxieverfahren Kathode galvanisch mit Gehäuseboden verbunden Hohe Zuverlässigkeit Großer Öffnungskegel Gehäusegleich mit BP 103, BPX 63, SFH 464, SFH 483 Anwendungsklasse nach DIN 40 040 GQG liquid phase epitaxy process Cathode is
LD242
Siemens Group
39.85 KB
Gaas infrared emitter.
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 242 ø0.45 2.54 mm spacing Chip position ø4.3 ø4.1 1 0.9 .1 1.1 .9 0 2.7 1 14.5 12.5 3.6 3.0 .
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LD242 GaAs-IR-Lumineszenzdiode (OSRAM)
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