LD274-3 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Siemens Group

Description

GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 Area not flat 0.6 0.4 2.54 mm spacing 0.8 0.4 9.0 8.2 7.8 7.5 ø5.1 ø4.8 5.9 5.5 Approx.wei.
Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchl.

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Datasheet Specifications

Part number: LD274-3
Manufacturer: Siemens Group
File Size: 34.63 KB
Datasheet: LD274-3_SiemensSemiconductorGroup.pdf
Description: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Features

* q Extremely narrow half angle q GaAs infrared emitting diode, fabricated in a q q q q Schmelzepitaxieverfahren Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Gruppiert lieferbar Gehäusegleich mit SFH 484 liquid phase epitaxy process High reliability High pulse handling capability Available in group

Applications

* q IR remote control of hi-fi and TV-sets, video Rundfunkgeräten, Videorecordern, Lichtdimmern, Geräten Typ Type LD 274 LD 274-21) LD 274-3 1) 1) tape recorders, dimmers, of various equipment Gehäuse Package 5-mm-LED-Gehäuse (T 1 3/4), graugetöntes EpoxyGießharz, Anschlüsse im 2.54-mm-Raster (1/10’

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LD274-3 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Siemens Group

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