* q Extremely narrow half angle q GaAs infrared emitting diode, fabricated in a q q q q Schmelzepitaxieverfahren Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Gruppiert lieferbar Gehäusegleich mit SFH 484 liquid phase epitaxy process High reliability High pulse handling capability Available in group
LD274
Siemens Group
34.63 KB
Gaas-ir-lumineszenzdiode gaas infrared emitter.
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
LD 274
Area not flat 0.6 0.4
2.54 mm spacing 0.8 0.4
9.0 8.2 7.8 7.5
ø5.1 ø4.8
5.9 5.5
Approx. wei.
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