BP104F Datasheet - Siemens Semiconductor Group

BP104F Silicon Phototransistor

Bestellnummer Ordering Code Q62702-P84 Q62702-P1646 Symbol Symbol Wert Value * 40 + 85 20 150 Einheit Unit °C V mW Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 °C Top; Tstg VR Ptot Semiconductor Group 2 .

Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT Silicon PIN Photodiode with Daylight Filter NEW: in SMT BP 104 F BP 104 FS 0.6 0.4 1.2 0.7 0.8 0.6 Cathode marking 4.0 3.7 5.4 4.9 4.5 4.3 Chip position 0.6 0.4 2.2 1.9 0.6 0.4 0.8 0.6 0.5 0.3 0.35 0.2 0.6 0.4 0 5˚ 5.08 mm spacing Photosensitive area 2.20 mm x 2.20 mm GEO06075 1.6 1.2 Approx. weight 0.1 g Chip position 1.1 0.9 1.2 1.1 0.3 00.1 6.7 6.2 4.5 4.3 0.9 0.7 4.0 3.7 1.7 1.5 1.6 1.2 05 ˚ 0.2 0.1 3.5 3.

BP104F Features

* q Especially suitable for applications of 950 nm q Short switching time (typ. 20 ns) q DIL plastic package with high packing density q BP 104 FS: suitable for vapor-phase and IR-reflow soldering Applications q IR remote control of hi-fi and TV sets, Rundfunkgeräten, Videorecordern, Lichtdimmern, Ge

BP104F_SiemensSemiconductorGroup.pdf