BP103 NPN-Silizium-Fototransistor Silicon NPN Phototransistor

Siemens Semiconductor Group

Description

BP 103 NPN-Silizium-Fototransistor Silicon NPN Phototransistor BP 103 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise sp.
Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip.

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Datasheet Specifications

Part number: BP103
Manufacturer: Siemens Semiconductor Group
File Size: 331.42 KB
Datasheet: BP103_SiemensSemiconductorGroup.pdf
Description: NPN-Silizium-Fototransistor Silicon NPN Phototransistor

Applications

* from 420 nm to 1130 nm q High linearity q TO-18, base plate, transparent epoxy resin lens, with base connection Applications q Computer-controlled flashes q Photointerrupters q Industrial electronics q For control and drive circuits Bestellnummer Ordering Code Q62702-P75 Q62702-P79-S1 Q62702-P79-S2

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BP103 NPN-Silizium-Fototransistor Silicon NPN Phototransistor Siemens Semiconductor Group

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