BP104S Silicon Phototransistor

Siemens Semiconductor Group

Description

Neu: Silizium-PIN-Fotodiode New: Silicon PIN Photodiode BP 104 S Chip position 00.1 1.2 1.1 0.3 1.1 0.9 0.2 0.1 6.7 6.2 4.5 4.3 1.6 ±0.2 0.9 0.7 .
Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 °C Total power dissipatio.

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Datasheet Specifications

Part number: BP104S
Manufacturer: Siemens Semiconductor Group
File Size: 47.44 KB
Datasheet: BP104S_SiemensSemiconductorGroup.pdf
Description: Silicon Phototransistor

Applications

* from 400 nm to 1100 nm q Short switching time (typ. 20 ns) q Suitable for vapor-phase and IR-reflow soldering q Suitable for SMT Applications q Photointerrupters q IR remote controls q Industrial electronics q For control and drive circuits Typ Type BP 104 S Bestellnummer Ordering Code Q62702-P160

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BP104S Silicon Phototransistor Siemens Semiconductor Group

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