* q Especially suitable for applications from 400 nm to 1100 nm q Short switching time (typ. 20 ns) q Suitable for vapor-phase and IR-reflow soldering q Suitable for SMT Applications q Photointerrupters q IR remote controls q Industrial electronics q For control and drive circuits Typ Type BP 104 S
BP104S
Siemens Semiconductor Group
47.44 KB
Silicon phototransistor.
Neu: Silizium-PIN-Fotodiode New: Silicon PIN Photodiode
BP 104 S
Chip position
00.1 1.2 1.1 0.3
1.1 0.9
0.2 0.1
6.7 6.2 4.5 4.3 1.6 ±0.2
0.9 0.7
.
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