BPW33 Datasheet - Siemens Semiconductor Group

BPW33 Silizium-Fotodiode/ Silicon Photodiode

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 °C Total power dissipation Symbol Symbol Wert Value * 40 + 85 7 150 Einheit Unit °C V mW Top; Tstg VR Ptot Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Character.

Silizium-Fotodiode Silicon Photodiode BPW 33 0.6 0.4 1.2 0.7 0.8 0.6 Cathode marking 4.0 3.7 5.4 4.9 4.5 4.3 Chip position 0.6 0.4 0.8 0.6 0.5 0.3 0.35 0.2 0.6 0.4 0 5˚ 5.08 mm spacing Photosensitive area 2.65 mm x 2.65 mm GEO06643 1.8 1.4 3.5 3.0 0.6 0.4 2.2 1.9 Approx. weight 0.1 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm q Sperrstromarm (ty.

BPW33 Features

* q Especially suitable for applications from 350 nm to 1100 nm q Low reverse current (typ. 20 pA) q DIL plastic package with high packing density Applications q Exposure meters q Color analysis Typ Type BPW 33 Bestellnummer Ordering Code Q62702-P76 Semiconductor Group 1 1997-11-19 feo06643 B

BPW33 Datasheet (30.99 KB)