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BPW33 Silizium-Fotodiode/ Silicon Photodiode

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Description

Silizium-Fotodiode Silicon Photodiode BPW 33 0.6 0.4 1.2 0.7 0.8 0.6 Cathode marking 4.0 3.7 5.4 4.9 4.5 4.3 Chip position 0.6 0.4 0.8 0.6 0..
Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 °C Total power dissipatio.

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Datasheet Specifications

Part number
BPW33
Manufacturer
Siemens Semiconductor Group
File Size
30.99 KB
Datasheet
BPW33_SiemensSemiconductorGroup.pdf
Description
Silizium-Fotodiode/ Silicon Photodiode

Applications

* from 350 nm to 1100 nm q Low reverse current (typ. 20 pA) q DIL plastic package with high packing density Applications q Exposure meters q Color analysis Typ Type BPW 33 Bestellnummer Ordering Code Q62702-P76 Semiconductor Group 1 1997-11-19 feo06643 BPW 33 Grenzwerte Maximum Ratings Bezei

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