BPW34F Datasheet - Siemens Semiconductor Group

BPW34F Silicon PIN Photodiode

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 °C Total power dissipation Symbol Symbol Wert Value * 40 + 85 32 150 Einheit Unit °C V mW Top; Tstg VR Ptot Kennwerte (TA = 25 °C, λ = 950 nm) Characteristics Bezei.

Silizium-PIN-Fotodiode mit Tageslichtsperrfilter NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode with Daylight Filter NEW: in SMT and as Reverse Gullwing 5.4 4.9 4.5 4.3 BPW 34 F BPW 34 FS BPW 34 FS (E9087) feo06075 0.6 0.4 1.2 0.7 0.8 0.6 Cathode marking 4.0 3.7 Chip position 0.6 0.4 0.8 0.6 0.5 0.3 0.35 0.2 0.6 0.4 0 5˚ 5.08 mm spacing Photosensitive area 2.65 mm x 2.65 mm GEO06643 3.5 3.0 0.6 0.4 2.2 1.9 BPW 34 F Maße in mm, wenn nicht anders angegeben/Dimensions i.

BPW34F Features

* q Especially suitable for applications of 950 nm q Short switching time (typ. 20 ns) q DIL plastic package with high packing density q BPW 34 FS/(E9087); suitable for vaporphase and IR-reflow soldering Applications q IR remote control of hi-fi and TV sets, video tape recorders, remote controls of va

BPW34F Datasheet (42.79 KB)