BPW34FAS Datasheet - Siemens Semiconductor Group

BPW34FAS Silicon PIN Photodiode

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 °C Total power dissipation Symbol Symbol Wert Value * 40 + 85 32 150 Einheit Unit °C V mW Top; Tstg VR Ptot Kennwerte (TA = 25 °C, λ = 870 nm) Characteristics Bezei.

Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Neu: in SMT und als Reverse Gullwing Silicon PIN Photodiode with Daylight Filter New: in SMT and as Reverse Gullwing 5.4 4.9 4.5 4.3 BPW 34 FA BPW 34 FAS BPW 34 FAS (E9087) feo06075 0.6 0.4 1.2 0.7 0.8 0.6 Cathode marking 4.0 3.7 Chip position 0.6 0.4 0.8 0.6 0.5 0.3 0.35 0.2 0.6 0.4 0 5˚ 5.08 mm spacing Photosensitive area 2.65 mm x 2.65 mm GEO06643 3.5 3.0 0.6 0.4 2.2 1.9 BPW 34 FA Maße in mm, wenn nicht anders angegeben/Dimensio.

BPW34FAS Features

* q Especially suitable for the wavelength range of 830 nm to 880 nm q Short switching time (typ. 20 ns) q DIL plastic package with high packing density q BPW 34 FAS/(E9087): Suitable for vapor-phase and IR-reflow soldering Applications q IR-remote control of hi-fi and TV sets, video tape recorders, r

BPW34FAS Datasheet (48.78 KB)