BPW34S Datasheet - Siemens Semiconductor Group

BPW34S Silicon PIN Photodiode

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Verlustleistung, TA = 25 °C Total power dissipation Symbol Symbol Wert Value * 40 + 85 32 150 Einheit Unit °C V mW Top; Tstg VR Ptot Kennwerte (TA = 25 °C, Normlicht A, T = 2856 K) Characte.

Silizium-PIN-Fotodiode NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode NEW: in SMT and as Reverse Gullwing 5.4 4.9 4.5 4.3 BPW 34 BPW 34 S BPW 34 S (E9087) feo06643 0.6 0.4 1.2 0.7 0.8 0.6 Cathode marking 4.0 3.7 Chip position 0.6 0.4 0.8 0.6 0.5 0.3 0.35 0.2 0.6 0.4 0 5˚ 5.08 mm spacing Photosensitive area 2.65 mm x 2.65 mm GEO06643 3.5 3.0 0.6 0.4 2.2 1.9 BPW 34 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkma.

BPW34S Features

* q Especially suitable for applications from 400 nm to 1100 nm q Short switching time (typ. 20 ns) q DIL plastic package with high packing density q BPW 34 S/(E9087): suitable for vapor-phase and IR-reflow soldering (JEDEC level 4) Applications q Photointerrupters q IR remote controls q Industrial el

BPW34S Datasheet (50.79 KB)