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Q62702-C2306 - NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

The Q62702-C2306 by Siemens Semiconductor Group is a NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage). Below is the official datasheet preview.

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Official preview page of the Q62702-C2306 NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) datasheet (Siemens Semiconductor Group).

Datasheet Details

Part number Q62702-C2306
Manufacturer Siemens Semiconductor Group
File Size 272.32 KB
Description NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)
Datasheet download datasheet Q62702-C2306_SiemensSemiconductorGroup.pdf
Additional preview pages of the Q62702-C2306 datasheet.

Q62702-C2306 Product details

Description

Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Total power dissipation, TS = 115 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg BC846W BC 847 W BC 849 W BC 848 W BC 840 W 65 80 80 6 45 50 50 6 100 200 250 150 65 to 150 30 30 30 5 Unit V V V V mA mA mW ˚C ˚C 240

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