Q62702P1137 Datasheet (77.73 KB)
Q62702P1137
Siemens
77.73 KB
Infra-red emitter 5mm.
GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters
SFH 415 SFH 416
Cathode
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29 27
9.0 8.2
spacing 2.54 mm
0.4 0.8
1.8 1.2
7.8.
* q GaAs infrared emitting diodes, fabricated in q q q q q im Schmelzepitaxieverfahren Gute Linearität (Ie = f [IF]) bei hohen Strömen Sehr hoher Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit SFH 415: Gehäusegleich mit SFH 300, SFH 203 a liquid phase epitaxy process Good linearity (Ie =
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Ordering Code (tape and reel) Q62702-A1004
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