Q62702P1137 Datasheet - Siemens

Q62702P1137 Infra-red Emitter 5mm

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Symbol Symbol .

GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Cathode www.DataSheet4U.com 29 27 9.0 8.2 spacing 2.54 mm 0.4 0.8 1.8 1.2 7.8 7.5 5.9 5.5 ø4.8 ø5.1 Area not flat Chip position 4.8 4.2 0.6 0.4 GEO06645 Area not flat 0.6 0.4 6.9 6.1 5.7 5.5 2.54 mm spacing 0.8 0.4 5.9 5.5 1.8 1.2 29.5 27.5 Cathode (Diode) Collector (Transistor) ø5.1 ø4.8 4.0 3.4 Chip position 0.6 0.4 fex06630 GEX06630 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise.

Q62702P1137 Features

* q GaAs infrared emitting diodes, fabricated in q q q q q im Schmelzepitaxieverfahren Gute Linearität (Ie = f [IF]) bei hohen Strömen Sehr hoher Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit SFH 415: Gehäusegleich mit SFH 300, SFH 203 a liquid phase epitaxy process Good linearity (Ie =

Q62702P1137_Siemens.pdf

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Datasheet Details

Part number:

Q62702P1137

Manufacturer:

Siemens

File Size:

77.73 KB

Description:

Infra-red emitter 5mm.

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