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Other Datasheets by Siemens Semiconductor Group
Q62702-A1006- Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators)
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Q62702-A1028- Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)
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Q62702-A1031- Silicon Switching Diode Array (For high speed switching applications Common anode)
Full PDF Text Transcription
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Silicon Schottky Diode
BAT 63
q
Low barrier diode for mixer and detectors up to GHz frequencies
Type
Ordering Code (tape and reel) Q62702-A1004
1 A1
Pin Configuration 2 3 4 C2 A2 C1
Marking
Package
BAT 63
63
SOT-143
Maximum Ratings Parameter Reverse voltage Forward current Junction temperature Storage temperature range Thermal Resistance Junction-ambient1) Symbol Values 3 100 150 – 55 … + 150 Unit V mA °C °C
VR IF Tj Tstg
Rth JA
≤ 450
K/W
1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm.
Semiconductor Group
1
10.94
BAT 63
Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. DC Characteristics Reverse current VR = 3 V Forward voltage IF = 1 mA Diode capacitance VR = 0.