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Q62702-A1004 - Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)

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Part number Q62702-A1004
Manufacturer Siemens Semiconductor Group
File Size 114.21 KB
Description Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)
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Silicon Schottky Diode BAT 63 q Low barrier diode for mixer and detectors up to GHz frequencies Type Ordering Code (tape and reel) Q62702-A1004 1 A1 Pin Configuration 2 3 4 C2 A2 C1 Marking Package BAT 63 63 SOT-143 Maximum Ratings Parameter Reverse voltage Forward current Junction temperature Storage temperature range Thermal Resistance Junction-ambient1) Symbol Values 3 100 150 – 55 … + 150 Unit V mA °C °C VR IF Tj Tstg Rth JA ≤ 450 K/W 1) Package mounted on aluminum 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 10.94 BAT 63 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. DC Characteristics Reverse current VR = 3 V Forward voltage IF = 1 mA Diode capacitance VR = 0.
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