* High barrier diode for double balanced mixers, phase detectors and modulators ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type BAT 114-099R Marking 14s Ordering Code (taped) Q62702-A1006 Pin Configuration Package1) SOT-143 1) Dimensions see chapter Packa
Q62702-A1006 Datasheet (46.93 KB)
Q62702-A1006
Siemens Semiconductor Group
46.93 KB
Silicon crossover ring quad schottky diode (high barrier diode for double balanced mixers/ phase detectors and modulators).
📁 Related Datasheet
Q62702-A1004 Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) (Siemens Semiconductor Group)
Q62702-A1010 Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) (Siemens Semiconductor Group)
Q62702-A1017 Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators) (Siemens Semiconductor Group)
Q62702-A1025 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) (Siemens Semiconductor Group)
Q62702-A1028 Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) (Siemens Semiconductor Group)
Q62702-A1028 Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies) (Siemens Semiconductor Group)
Q62702-A1030 Silicon Switching Diode Array (For high speed switching applications Common cathode) (Siemens Semiconductor Group)
Q62702-A1031 Silicon Switching Diode Array (For high speed switching applications Common anode) (Siemens Semiconductor Group)
Q62702-A1036 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) (Siemens Semiconductor Group)
Q62702-A1037 Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) (Siemens Semiconductor Group)
