Q62702-A1025 - Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
Q62705-K110 - Silicon Spreading Resistance Temperature Sensor(Siemens Semiconductor)
Q62705-K111 - Silicon Spreading Resistance Temperature Sensor(Siemens Semiconductor)
Other Datasheets by Siemens Semiconductor Group
Q62702-A1028- Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)
Q62702-A1028- Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies)
Q62702-A1004- Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)
Q62702-A1006- Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators)
Q62702-A1010- Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz)
Q62702-A1017- Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators)
Q62702-A1030- Silicon Switching Diode Array (For high speed switching applications Common cathode)
Q62702-A1031- Silicon Switching Diode Array (For high speed switching applications Common anode)
Full PDF Text Transcription
Click to expand full text
BAR 63-03W
Silicon PIN Diode
l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz
Type BAR 63-03W Marking G Ordering Code (tape and reel) Q62702-A1025 Pin Configuration Package 1 2 A C SOD-323
1)
Maximum Ratings Parameter Reverse voltage Forward current Total Power dissipation TS ≤ 111°C Operating temperature range Storage temperature range Thermal Resistance Junction-ambient
1)
Symbol
BAR 63-03W 50 100 250 -55 +150°C -55...+150°C
Unit V mA mW °C °C
VR IF Ptot Top Tstg
Junction-soldering point
Rth JA Rth JS
≤ 235 ≤ 155
K/W K/W
_________________________
1)Package mounted on alumina 15mm x 16.7mm x 0.7mm
Semiconductor Group
1
Edition A01, 22.07.