Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector peak current Total power dissipation, TS = 115 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth J
Q62702-C2312 Features
* q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC 859 W, BC 860 W (PNP) Type BC 846 AW BC 846 BW BC 847 AW BC 847 BW BC 847 CW BC 848 AW BC 848 BW B
Q62702-C2312_SiemensSemiconductorGroup.pdf
Datasheet Details
Q62702-C2312
Siemens Semiconductor Group
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Npn silicon af transistor (for af input stages and driver applications high current gain low collector-emitter saturation voltage).
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