SFH302 - NPN-Silizium-Fototransistor Silicon NPN Phototransistor
Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t
SFH302 Features
* q Especially suitable for applications from 450 nm to 1100 nm q High linearity q TO-18, base plate, transparent exposy resin lens, with base connection q Available in groups Applications q Photointerrupters q Industrial electronics q For control and drive circuits Typ Type SFH 302 SFH 302-2 SFH 302
