HYB5116165BJ-50 Datasheet PDF - Siemens 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Specs

HYB5116165BJ-50 - 1M x 16-Bit Dynamic RAM 1k & 4k Refresh

Datasheet Summary

Description

N.C.

Features

include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5116165BJ-50 HYB 5116165BJ-60 HYB 5116165BJ-70 HYB 5118165BJ-50 HYB 5118165BJ-60 HYB 5118165BJ-70 Pin Names A0-A9 A0-A9 A0-A11 A0 to A7 RAS OE I/O1-I/O16 UCAS LCAS WE Row Address Inputs for HYB5118165BSJ Column Address Inputs for HYB5118165BSJ Row Address Inputs for HYB5116165BSJ Column Address Inputs for HYB5116165BSJ Row Address Strobe O.

Datasheet Details

Part number	HYB5116165BJ-50
Manufacturer	Siemens
File Size	269.84 KB
Description	1M x 16-Bit Dynamic RAM 1k & 4k Refresh
Datasheet	HYB5116165BJ-50 Datasheet
Additional preview pages of the HYB5116165BJ-50 datasheet.

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Full PDF Text Transcription

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1M x 16-Bit Dynamic RAM 1k & 4k Refresh (Hyper Page Mode- EDO) Advanced Information • • • HYB5116165BSJ -50/-60/-70 HYB5118165BSJ -50/-60/-70 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/Write cycle time Hyper page mode (EDO) cycle time 50 13 25 84 20 -60 60 15 30 104 25 -70 70 20 35 124 30 ns ns ns ns ns • • • • • • • • • Single + 5 V (± 10 %) supply Low power dissipation max. 1100 active mW ( HYB5118165BSJ-50) max. 990 active mW ( HYB5118165BSJ-60) max. 880 active mW ( HYB5118165BSJ-70) max. 550 active mW ( HYB5116165BSJ-50) max. 495 active mW ( HYB5116165BSJ-60) max. 440 active mW ( HYB5116165BSJ-70) 11 mW standby (TTL) 5.5.

Published: Apr 23, 2005 |