HYB5116165BJ-70 Datasheet - Siemens

HYB5116165BJ-70 1M x 16-Bit Dynamic RAM 1k & 4k Refresh

DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) VCC VSS N.C. Semiconductor Group 2 HYB 5116(8)165BSJ-50/-60/-70 1M x 16-EDO DRAM P-SOJ-42-1 400 mil Vcc I/O1 I/O2 I/O3 I/O4 Vcc I/O5 I/O6 I/O7.

1M x 16-Bit Dynamic RAM 1k & 4k Refresh (Hyper Page Mode- EDO) Advanced Information HYB5116165BSJ -50/-60/-70 HYB5118165BSJ -50/-60/-70 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/Write cycle time Hyper page mode (EDO) cycle time 50 13 25 84 20 -60 60 15 30 104 25 -70 70 20 35 124 30 ns ns ns ns ns

HYB5116165BJ-70 Features

* include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5116165BJ-50 HYB 5116165BJ-60 HYB 5116165BJ-70 HYB 5118165BJ-50 HYB 5118165BJ-60 HYB 5118165BJ-70 Pin Names A0-A9 A0-A9 A0-A11 A0 to A7 RAS O

HYB5116165BJ-70 Datasheet (269.84 KB)