HYB5117400BJ-50 Datasheet - Siemens

HYB5117400BJ-50 4M x 4-Bit Dynamic RAM 2k & 4k Refresh

Semiconductor Group 2 1998-10-01 HYB 5116(7)400BJ-50/-60 HYB 3116(7)400BJ/BT-50/-60 4M × 4 DRAM Pin Names HYB 5(3)116400 4k-Refresh Row Address Inputs Column Address Inputs Row Address Strobe Column Address Strobe Output Enable Data Input/Output Read/Write Input Power Supply Ground (0 V) Not Co.

4M × 4-Bit Dynamic RAM 2k & 4k Refresh (Fast Page Mode) Advanced Information 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Fast Page Mode operation Performance: -50 -60 60 15 30 40 ns ns ns ns HYB 5116400BJ-50/-60 HYB 5117400BJ-50/-60 HYB 3116400BJ/BT-50/-60 HYB 3117400BJ-50/-60 tRAC RAS access time tCAC CAS access time tAA tRC tPC Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 84 35 104 ns <.

HYB5117400BJ-50 Datasheet (138.54 KB)