HYB5117400BT-60 Datasheet - Siemens

HYB5117400BT-60 4M x 4-Bit Dynamic RAM

DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) VCC VSS N.C. Semiconductor Group 2 HYB 5117400BJ/BT-50/-60/-70 4M x 4-DRAM Vcc I/O1 I/O2 WE RAS N.C. A10 A0 A1 A2 A3 VCC 1 2 3 4 5 6 8 9 10 11 .

4M x 4-Bit Dynamic RAM HYB5117400BJ -50/-60/-70 HYB5117400BT -50/-60/-70 Advanced Information 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 90 35 -60 60 15 30 110 40 -70 70 20 35 130 45 ns ns ns ns ns Single + 5 V (± 10 %) supply Low power dissipation max. 660 active.

HYB5117400BT-60 Features

* include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5117400BJ-50 HYB 5117400BJ-60 HYB 5117400BJ-70 HYB 5117400BT-50 HYB 5117400BT-60 HYB 5117400BT-70 Pin Names A0 to A10 A0 to A10 RAS OE I/O1-I

HYB5117400BT-60 Datasheet (325.56 KB)