HYB5117800BSJ-50 Datasheet - Siemens

HYB5117800BSJ-50 2M x 8-Bit Dynamic RAM

DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) VCC VSS N.C. Semiconductor Group 2 HYB 5117800BSJ-50/-60/-70 2M x 8-DRAM P-SOJ-28-3 (400mil) VCC I/O1 I/O2 I/O3 I/O4 WE RAS N.C. A10 A0 A1 A2 A3 VCC O 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18.

2M x 8-Bit Dynamic RAM HYB5117800BSJ-50/-60/-70 Advanced Information 2 097 152 words by 8-bit organization 0 to 70 °C operating temperature Performance:: -50 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 90 35 -60 60 15 30 110 40 -70 70 20 35 130 45 ns ns ns ns ns Single + 5 V (± 10 %) supply Low power dissipation max. 660 active mW (-50 version) max. 6.

HYB5117800BSJ-50 Features

* include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5117800BSJ-50 HYB 5117800BSJ-60 HYB 5117800BSJ-70 Pin Names A0 to A10 A0 to A9 RAS OE I/O1-I/O8 CAS WE Row Address Inputs Column Address Inpu

HYB5117800BSJ-50 Datasheet (226.76 KB)