HYB5118160BSJ-50 Datasheet - Siemens

HYB5118160BSJ-50 1M x 16-Bit Dynamic RAM

P-SOJ-42-1 400 mil DRAM (access time 50 ns) P-SOJ-42-1 400 mil DRAM (access time 60 ns) P-SOJ-42-1 400 mil DRAM (access time 70 ns) VCC VSS N.C. Semiconductor Group 2 HYB 5118160BSJ-50/-60/-70 1M x 16-DRAM P-SOJ-42 (400 mil) Vcc I/O1 I/O2 I/O3 I/O4 Vcc I/O5 I/O6 I/O7 I/O8 N.C. N.C. WE RAS N.C.

1M x 16-Bit Dynamic RAM (1k-Refresh) HYB5118160BSJ-50/-60/-70 Advanced Information 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 90 35 -60 60 15 30 110 40 -70 70 20 35 130 45 ns ns ns ns ns Single + 5 V (± 10 %) supply Low power dissipation max. 1100 active mW (-50 .

HYB5118160BSJ-50 Features

* include single + 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as Schottky TTL. Ordering Information Type HYB 5118160BSJ-50 HYB 5118160BSJ-60 HYB 5118160BSJ-70 Pin Names A0 to A9 A0 to A9 RAS OE I/O1-I/O16 UCAS LCAS WE Row Address Inputs Column Addess

HYB5118160BSJ-50 Datasheet (254.49 KB)