HYB5118160BSJ-60 Datasheet - Siemens

HYB5118160BSJ-60 1M x 16-Bit Dynamic RAM

5V 5V 50 ns FPM-DRAM 60 ns FPM-DRAM 3.3 V 50 ns FPM-DRAM 3.3 V 60 ns FPM-DRAM VCC VSS N.C. Semiconductor Group 2 1998-10-01 HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 1M × 16 DRAM P-SOJ-42 (400 mil) V CC I/O1 I/O2 I/O3 I/O4 V CC I/O5 I/O6 I/O7 I/O8 N.C. N.C. WE RAS N.C. N.C. A0 A1 A2 A3 V C.

1M × 16-Bit Dynamic RAM 1k Refresh (Fast Page Mode) Advanced Information 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature Fast Page Mode operation Performance: -50 -60 60 15 30 104 40 ns ns ns ns ns HYB 5118160BSJ-50/-60 HYB 3118160BSJ-50/-60 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 84 35 Power Dissipation, Refresh & Addressi.

HYB5118160BSJ-60 Datasheet (191.69 KB)