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HYM322035GS-50

2M x 32-Bit Dynamic RAM Module

HYM322035GS-50 Features

* ddress can be changed once or less while RAS = Vil. In case of ICC4 it can be changed once or less during a hyper page mode (EDO) cycle. 5) An initial pause of 200 µs is required after power-up followed by 8 RAS cycles of which at least one cycle has to be a refresh cycle, before proper device o

HYM322035GS-50 General Description

EDO-DRAM Module (access time 50 ns) EDO-DRAM Module (access time 60 ns) EDO-DRAM Module (access time 70 ns) EDO-DRAM Module (access time 50 ns) EDO-DRAM Module (access time 60 ns) EDO-DRAM Module (access time 70 ns) Semiconductor Group 2 HYM 322035S/GS-50/-60/-70 2M × 32-Bit EDO-Module Pin Confi.

HYM322035GS-50 Datasheet (79.76 KB)

Preview of HYM322035GS-50 PDF

Datasheet Details

Part number:

HYM322035GS-50

Manufacturer:

Siemens

File Size:

79.76 KB

Description:

2m x 32-bit dynamic ram module.
2M x 32-Bit Dynamic RAM Module HYM 322035S/GS-50/-60/-70 Advanced Information

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* 2 097 152 words by 32-bit organization .

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TAGS

HYM322035GS-50 32-Bit Dynamic RAM Module Siemens

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