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HYM322035GS-70 2M x 32-Bit Dynamic RAM Module

HYM322035GS-70 Description

2M x 32-Bit Dynamic RAM Module HYM 322035S/GS-50/-60/-70 Advanced Information * * * 2 097 152 words by 32-bit organization .
EDO-DRAM Module (access time 50 ns) EDO-DRAM Module (access time 60 ns) EDO-DRAM Module (access time 70 ns) EDO-DRAM Module (access time 50 ns) EDO-DR.

HYM322035GS-70 Features

* ddress can be changed once or less while RAS = Vil. In case of ICC4 it can be changed once or less during a hyper page mode (EDO) cycle. 5) An initial pause of 200 µs is required after power-up followed by 8 RAS cycles of which at least one cycle has to be a refresh cycle, before proper device o

HYM322035GS-70 Applications

* Tin-Lead contact pads (S-version) Gold contact pads (GS - version)
* Semiconductor Group Semicunductor 1 2.96 HYM 322035S/GS-50/-60/-70 2M × 32-Bit EDO-Module The HYM 322035

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32-Bit Dynamic RAM Module Siemens
Siemens HYM322035GS-70-like datasheet