HYM368035GS-60 - 8M x 36-Bit EDO-DRAM Module
EDO-DRAM Module (access time 60 ns) EDO-DRAM Module (access time 60 ns) Semiconductor Group 2 HYM 368035S/GS-60 8M × 36-Bit EDO-Module Pin Configuration (top view) Pin Names A0-A10 DQ0-DQ35 CAS0 - CAS3 RAS0 - RAS3 WE Address Inputs for HYM 368035S/GS Data Input/Output Column Address Strobe Row
8M × 36-Bit EDO-DRAM Module HYM 368035S/GS-60 Advanced Information 8 388 608 words by 36-Bit organization in 2 banks Fast access and cycle time 60 ns RAS access time 15 ns CAS access time 104 ns cycle time Hyper page mode (EDO) capability 25 ns cycle time Single + 5 V (± 10 %) supply Low power dissipation max.
7260 mW active CMOS 132 mW standby TTL 264 mW standby CAS-before-RAS refresh RAS-only-refresh Hidden-refresh 24 decoupling capacitors mounted on
