HYM721000GS-60 Datasheet - Siemens

HYM721000GS-60 1M x 72-Bit Dynamic RAM Module

60ns DRAM module 70ns DRAM module 60ns DRAM module 70ns DRAM module Note: 1 = High Level ( Driver Output) , 0 = Low Level (Driver Output) for PDE active ( ground) . For PDE at a high level all PD terminal are in tri-state. Semiconductor Group 2 HYM721000/10GS-60/-70 1M x 72 ECC- Module Pin Con.

1M × 72-Bit Dynamic RAM Module (ECC - Module) HYM 721000GS-60/-70 HYM 721010GS-60/-70 Advanced Information 1 048 576 words by 72-bit ECC - mode organization Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time 130 ns cycle time (-70 version) Fast page mode capability with 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) Single + 5 V (± 10 %) supply Low power dissipation max. 10890 mW active (-60 version) max. 9900 mW a.

HYM721000GS-60 Features

* ime Write comm

HYM721000GS-60_SiemensSemiconductorGroup.pdf