HYM72V4010GS-50 Datasheet - Siemens

HYM72V4010GS-50 4M x 72-Bit Dynamic RAM Module

3.3V 50ns DRAM module 3.3V 60ns DRAM module 3.3V 50ns DRAM module 3.3V 60ns DRAM module Note: 1 = High Level ( Driver Output) , 0 = Low Level (Driver Output) for PDE active ( ground) . For PDE at a high level all PD terminal are in tri-state. Semiconductor Group 2 HYM72V4000/10GS-50/-60 4M x 72.

4M × 72-Bit Dynamic RAM Module (ECC - Module ) HYM 72V4000GS-50/-60 HYM 72V4010GS-50/-60 168 pin 4 194 304 words by 72-bit ECC - mode organization for PC main memory applications Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version) Fast page mode capability with 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) Single + 3.3V ( ± 0.3V) supply Low power dissipation max. 6480 mW active (-50 version) ma.

HYM72V4010GS-50_SiemensSemiconductorGroup.pdf