Datasheet Details
- Part number
- HYS6472V4200GU
- Manufacturer
- Siemens
- File Size
- 76.09 KB
- Datasheet
- HYS6472V4200GU_SiemensSemiconductorGroup.pdf
- Description
- 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module
HYS6472V4200GU Description
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module HYS64(72)V4200GU HYS64(72)V8220GU PC66 & PC100 168 pin unbuffered DI.
100 Mhz 4M x 64 1 bank SDRAM module 100 MHz 4M x 72 1 bank SDRAM module 100 Mhz 8M x 64 2 bank SDRAM module 100 MHz 8M x 72 2 bank SDRAM module 100 M.
HYS6472V4200GU Features
* C100-323 -10 PC66
Unit
Note
min. max. min. max. min. max. Clock and Clock Enable
Clock Cyc
HYS6472V4200GU Applications
* One bank 4M x 64, 4Mx72 and two bank 8M x 64, 8M x 72 organisation Optimized for byte-write non-parity and ECC applications JEDEC standard Synchronous DRAMs (SDRAM) Fully PC board layout compatible to INTEL’s Rev. 1.0 module specification SDRAM Performance:
-8 fCK tAC Clock frequency (max. ) Clock ac
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