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HYS72V2200GU-10 Datasheet - Siemens

HYS72V2200GU-10 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module

Module Height 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ 1,25“ L-DIM-168-29 100 Mhz 2M x 64 1 bank SDRAM module L-DIM-168-29 100 MHz 2M x 72 1 bank SDRAM module L-DIM-168-29 100 Mhz 4M x 64 2 bank SDRAM module L-DIM-168-29 100 Mhz 4M x 72 2 bank SDRAM module L-DIM-168-29 100.
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 168 pin unbuffered DIMM Modules HYS64/72V2200GU-8/-10 HYS64/72V4220GU-8/-10 168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications 1 bank 2M x 64, 2M x 72 and 2 bank 4M x 64, 4M x 72 organisation Optimized for byte-write non-parity or ECC applications JEDEC standard Synchronous DRAMs (SDRAM) Fully PC board layout compatible to INTEL’ s Rev. 1.0 modu.

HYS72V2200GU-10 Features

* 10 SDRAM-Modules AC Characteristics 3)4) TA = 0 to 70 °C; VSS = 0 V; VCC = 3.3 V ± 0.3

HYS72V2200GU-10 Datasheet (104.52 KB)

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Datasheet Details

Part number:

HYS72V2200GU-10

Manufacturer:

Siemens

File Size:

104.52 KB

Description:

3.3v 2m x 64/72-bit 1 bank sdram module 3.3v 4m x 64/72-bit 2 bank sdram module.

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TAGS

HYS72V2200GU-10 3.3V 72-Bit BANK SDRAM Module 3.3V 72-Bit BANK SDRAM Module Siemens

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