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BF543 Silicon N Channel MOS FET Triode

BF543 Description

Silicon N Channel MOS FET Triode Preliminary Data q q BF 543 For RF stages up to 300 MHz preferably in FM applications IDSS = 4 mA, gfs = 12 mS ESD.

BF543 Applications

* IDSS = 4 mA, gfs = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BF 543 Marking LDs Ordering Code (tape and reel) Q62702-F1372 Pin Configuration 1 2 3 G D S Package1) SOT-23 Maximum Ratings Parameter Drain-source voltage Drain current Gate-source peak curr

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Datasheet Details

Part number
BF543
Manufacturer
Siemens Semiconductor Group
File Size
97.31 KB
Datasheet
BF543_SiemensSemiconductorGroup.pdf
Description
Silicon N Channel MOS FET Triode

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Silicon Channel MOS FET Triode Siemens Semiconductor Group
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