Datasheet4U Logo Datasheet4U.com

SGT20T135QR1P7 1350V INVERSE IGBT

📥 Download Datasheet Datasheet Preview Page 1

Description

Silan Microelectronics SGT20T135QR1P7(PN)(PT)_Datasheet 20A, 1350V INVERSE IGBT .
SGT20T135QR1P7/PN/PT inverse IGBT employs Silan new Reverse Conducting technology, features low conduction loss, low switching loss, high breakdown vo.

📥 Download Datasheet

Preview of SGT20T135QR1P7 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Features

* low conduction loss, low switching loss, high breakdown voltage, internal Freewheeling diode, positive/negative temperature coefficient. It is suitable for Induction heating field. FEATURES
* 20A, 1350V, VCE(sat)(typ. )=1.8V@IC=20A
* Low conduction loss
* Internal freewheeling diode

SGT20T135QR1P7 Distributors

📁 Related Datasheet

  • SGT23B13 - Unidirectional Transient Surge Suppressors (Harris)
  • SGT23U13 - (SGTxxxx) Unidirectional Transient Surge Suppressors (Harris)
  • SGT27B13 - Unidirectional Transient Surge Suppressors (Harris)
  • SGT27B27 - Unidirectional Transient Surge Suppressors (Harris)
  • SGT27S10 - Gate Controlled Unidirectional Transient Surge Suppressors (Harris Semiconductor)
  • SGT27S23 - Gate Controlled Unidirectional Transient Surge Suppressors (Harris Semiconductor)

📌 All Tags

1350V INVERSE IGBT Silan Microelectronics
Silan Microelectronics SGT20T135QR1P7-like datasheet