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SGT20T135QR1P7 1350V INVERSE IGBT

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Description

Silan Microelectronics SGT20T135QR1P7(PN)(PT)_Datasheet 20A, 1350V INVERSE IGBT .
SGT20T135QR1P7/PN/PT inverse IGBT employs Silan new Reverse Conducting technology, features low conduction loss, low switching loss, high breakdown vo.

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Features

* low conduction loss, low switching loss, high breakdown voltage, internal Freewheeling diode, positive/negative temperature coefficient. It is suitable for Induction heating field. FEATURES
* 20A, 1350V, VCE(sat)(typ. )=1.8V@IC=20A
* Low conduction loss
* Internal freewheeling diode

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