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SGT20T135QR1P7 Datasheet - Silan Microelectronics

SGT20T135QR1P7 1350V INVERSE IGBT

SGT20T135QR1P7 Features

* low conduction loss, low switching loss, high breakdown voltage, internal Freewheeling diode, positive/negative temperature coefficient. It is suitable for Induction heating field. FEATURES

* 20A, 1350V, VCE(sat)(typ.)=1.8V@IC=20A

* Low conduction loss

* Internal freewheeling diode

SGT20T135QR1P7-SilanMicroelectronics.pdf

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Datasheet Details

Part number:

SGT20T135QR1P7

Manufacturer:

Silan Microelectronics

File Size:

272.07 KB

Description:

1350v inverse igbt.

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