Description
Silan Microelectronics SGT20T135QR1P7(PN)(PT)_Datasheet 20A, 1350V INVERSE IGBT .
SGT20T135QR1P7/PN/PT inverse IGBT employs Silan new Reverse Conducting technology, features low conduction loss, low switching loss, high breakdown vo.
Features
* low conduction loss, low switching loss, high breakdown voltage, internal Freewheeling diode, positive/negative temperature coefficient. It is suitable for Induction heating field. FEATURES
* 20A, 1350V, VCE(sat)(typ. )=1.8V@IC=20A
* Low conduction loss
* Internal freewheeling diode