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SGT20T135QR1PT, SGT20T135QR1P7 1350V INVERSE IGBT

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Description

Silan Microelectronics SGT20T135QR1P7(PN)(PT)_Datasheet 20A, 1350V INVERSE IGBT .
SGT20T135QR1P7/PN/PT inverse IGBT employs Silan new Reverse Conducting technology, features low conduction loss, low switching loss, high breakdown vo.

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This datasheet PDF includes multiple part numbers: SGT20T135QR1PT, SGT20T135QR1P7. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
SGT20T135QR1PT, SGT20T135QR1P7
Manufacturer
Silan Microelectronics
File Size
272.07 KB
Datasheet
SGT20T135QR1P7-SilanMicroelectronics.pdf
Description
1350V INVERSE IGBT
Note
This datasheet PDF includes multiple part numbers: SGT20T135QR1PT, SGT20T135QR1P7.
Please refer to the document for exact specifications by model.

Features

* low conduction loss, low switching loss, high breakdown voltage, internal Freewheeling diode, positive/negative temperature coefficient. It is suitable for Induction heating field. FEATURES
* 20A, 1350V, VCE(sat)(typ. )=1.8V@IC=20A
* Low conduction loss
* Internal freewheeling diode

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