SVD1N60M Datasheet - Silan Microelectronics

SVD1N60M - 600V N-CHANNEL MOSFET

SVD1N60M/T/B/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provi.

SVD1N60M Features

* ∗ ∗ ∗ ∗ ∗ 1A,600V,RDS(on)（typ.）=8.6Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD1N60M SVD1N60M SVD1N60T SVD1N60B SVD1N60BTR SVD1N60D SVD1N60DTR Package TO-251-3L TO-251D-3L TO-220-3L TO-92-3L TO-92-3L TO-252-2L TO-252-2L

SVD1N60M-SilanMicroelectronics.pdf

SVD1N60M Datasheet Preview — Preview of SVD1N60M PDF

Datasheet Details

Part number:

SVD1N60M

Manufacturer:

Silan Microelectronics

File Size:

526.39 KB

Description:

600v n-channel mosfet.

SVD1N60M Distributor

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SVD1N60M 600V N-CHANNEL MOSFET Silan Microelectronics