SVD4N60D Datasheet - Silan

SVD4N60D, 600V N-Channel MOSFET

SVD4N60D/F(G)/T_Datasheet 4A, 600V N-CHANNEL MOSFET GENERAL .
SVD4N60D/F(G)/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS t.

Features

* ∗ 4A, 600V, RDS(on)(typ)=2.0Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD4N60T SVD4N60F SVD4N60FG SVD4N60D SVD4N60DTR Package TO-220-3L TO-220F-3L TO-220F-3L TO-252-2L TO-252-2L Marking SVD4N60T SVD4N60F SVD4N60FG

SVD4N60D-Silan.pdf