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SVD4N60F

600V N-Channel MOSFET

SVD4N60F Features

* ∗ 4A, 600V, RDS(on)(typ)=2.0Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD4N60T SVD4N60F SVD4N60FG SVD4N60D SVD4N60DTR Package TO-220-3L TO-220F-3L TO-220F-3L TO-252-2L TO-252-2L Marking SVD4N60T SVD4N60F SVD4N60FG

SVD4N60F General Description

SVD4N60D/F(G)/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide.

SVD4N60F Datasheet (1.76 MB)

Preview of SVD4N60F PDF

Datasheet Details

Part number:

SVD4N60F

Manufacturer:

Silan

File Size:

1.76 MB

Description:

600v n-channel mosfet.

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TAGS

SVD4N60F 600V N-Channel MOSFET Silan

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