Datasheet4U Logo Datasheet4U.com

SVD10N60F, SVD10N60T Datasheet - Silan Microelectronics

SVD10N60F - 600V N-CHANNEL MOSFET

SVD10N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide s.

SVD10N60F Features

* ∗ 10A,600V,RDS(on)(typ.)=0.78Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING SPECIFICATIONS Part No. SVD10N60T SVD10N60F Package TO-220-3L TO-220F-3L Marking SVD10N60T SVD10N60F Material Pb free Pb free Packing Tube Tube HANGZHOU SILAN MIC

SVD10N60T-SilanMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: SVD10N60F, SVD10N60T. Please refer to the document for exact specifications by model.
SVD10N60F Datasheet Preview Page 2 SVD10N60F Datasheet Preview Page 3

Datasheet Details

Part number:

SVD10N60F, SVD10N60T

Manufacturer:

Silan Microelectronics

File Size:

586.71 KB

Description:

600v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVD10N60F, SVD10N60T.
Please refer to the document for exact specifications by model.

SVD10N60F Distributor

📁 Related Datasheet

SVD10N60T SVD10N65F SVD10N65FG SVD10N65T SVD101 SVD102

📌 All Tags

SVD10N60T 600V N-CHANNEL MOSFET Silan Microelectronics