SVD10N60F Datasheet - Silan Microelectronics

SVD10N60F 600V N-CHANNEL MOSFET

SVD10N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide s.

SVD10N60F Features

* ∗ 10A,600V,RDS(on)(typ.)=0.78Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING SPECIFICATIONS Part No. SVD10N60T SVD10N60F Package TO-220-3L TO-220F-3L Marking SVD10N60T SVD10N60F Material Pb free Pb free Packing Tube Tube HANGZHOU SILAN MIC

SVD10N60F Datasheet (586.71 KB)