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SVD12N60F, SVD12N60T Datasheet - Silan Microelectronics

SVD12N60F 600V N-CHANNEL MOSFET

SVD12N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provid.

SVD12N60F Features

* ∗ 12A,600V,RDS(on)(typ)=0.58Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING SPECIFICATIONS Part No. SVD12N60T SVD12N60F Package TO-220-3L TO-220F-3L Marking SVD12N60T SVD12N60F Material Pb free Pb free Packing Tube Tube HANGZHOU SILAN MICR

SVD12N60T-SilanMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: SVD12N60F, SVD12N60T. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

SVD12N60F, SVD12N60T

Manufacturer:

Silan Microelectronics

File Size:

685.40 KB

Description:

600v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVD12N60F, SVD12N60T.
Please refer to the document for exact specifications by model.

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SVD12N60F SVD12N60T 600V N-CHANNEL MOSFET Silan Microelectronics

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