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SVD12N65F

650V N-CHANNEL MOSFET

SVD12N65F Features

* ∗ 12A,650V,RDS(on)(typ)=0.64Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING SPECIFICATIONS Part No. SVD12N65T SVD12N65F Package TO-220-3L TO-220F-3L Marking SVD12N65T SVD12N65F Material Pb free Pb free Packing Tube Tube HANGZHOU SILAN MICR

SVD12N65F General Description

SVD12N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide s.

SVD12N65F Datasheet (555.38 KB)

Preview of SVD12N65F PDF

Datasheet Details

Part number:

SVD12N65F

Manufacturer:

Silan Microelectronics

File Size:

555.38 KB

Description:

650v n-channel mosfet.

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SVD12N65F 650V N-CHANNEL MOSFET Silan Microelectronics

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