SVD12N60T Datasheet - Silan Microelectronics

SVD12N60T, 600V N-CHANNEL MOSFET

SVD12N60T/F_Datasheet 12A, 600V N-CHANNEL MOSFET GENERAL .
SVD12N60T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure DMOS tech.

Features

* ∗ 12A,600V,RDS(on)(typ)=0.58Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING SPECIFICATIONS Part No. SVD12N60T SVD12N60F Package TO-220-3L TO-220F-3L Marking SVD12N60T SVD12N60F Material Pb free Pb free Packing Tube Tube HANGZHOU SILAN MICR

SVD12N60T-SilanMicroelectronics.pdf